Performing molecular dynamics (MD) simulations of ablation of Xenon
atoms adsorbed on a Si/SiO2
surface revealed two distinct mechanisms of atoms removal from the
At low laser power, intense and continuous evaporation of atoms
from the the topmost layer results in removing the total
population of adsorbed Xe adsorbed on the surface (A).
At high laser power, ejection of the Xe atoms in form of a slab
is performed via explosive desorption mechanism due to the
temperature regime developing at the Xe- surface interface. The
ablation process starts after about 6.5ns from the beginning of
the simulation (B).
Partial heating of the MD simulation cell leads to Xe thermally
desorbing only from the heated part, thus crating a trough
through the Xe multilayer, which is one of the steps in
lift-off pulsed laser lithography (C).
SEM image demonstrating the capabilities of our patterning method.
One can see the word “HUJI” written in gold on a Si/SiO2 surface,
using lift-off buffer layer assisted laser patterning (LO-BLALP).
High resolution and accurate focus is observed.
C. Second, uniform laser pulse, ablates the remaining buffer
and metal on top, leaving behind the metallic image on top
of the sample’s surface.
B. Metal is then evaporated throughout.
A. A laser pulse, passed through a mask and lens hits a pre
adsorbed buffer covered surface, a laser pulse imprinting the image
from the mask to the buffer.